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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU4507DZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variationsresulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOLVCESMVCEOICICMPtotVCEsatICsatVFtf
PARAMETER
Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)
Collector current peak valueTotal power dissipation
Collector-emitter saturation voltageCollector saturation currentDiode forward voltageFall time
CONDITIONSVBE = 0 V
TYP.------41.7300
MAX.1500800815323.0-2.1400
UNITVVAAWVAVns
Ths ≤ 25 ˚C
IC = 4 A; IB = 1.0 Af = 16kHzIF = 4 A
ICsat = 4 A; f = 16kHz
PINNING - SOT186A
PIN123basecollectoremitterDESCRIPTIONPIN CONFIGURATION
caseSYMBOL
cbRbecaseisolated123eLIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOLVCESMVCEOICICMIBIBM-IBMPtotTstgTj
PARAMETER
Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)
Collector current peak valueBase current (DC)
Base current peak value
Reverse base current peak value 1Total power dissipationStorage temperatureJunction temperature
CONDITIONSVBE = 0 V
MIN.---------65-MAX.150080081546532150150
UNITVVAAAAAW˚C˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOLRth j-hsRth j-a
PARAMETERJunction to heatsinkJunction to ambient
CONDITIONS
with heatsink compoundin free air
TYP.-55
MAX.4.0-UNITK/WK/W
1 Turn-off current.
January 19991Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU4507DZ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specifiedSYMBOLVisolCisol
PARAMETER
R.M.S. isolation voltage from allthree terminals to externalheatsink
CONDITIONS
f = 50-60 Hz; sinusoidalwaveform;
R.H. ≤ 65% ; clean and dustfree
MIN.--10TYP.
MAX.2500-UNITVpF
Capacitance from T2 to externalf = 1 MHzheatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specifiedSYMBOLICESICESVCEOsustBVEBORbeVCEsatVBEsathFEhFEVF
PARAMETER
Collector cut-off current 2
CONDITIONS
MIN.--8007.5--0.83-4.2-TYP.---13.530-0.9275.71.7
MAX.1.02.0---3.01.01-7.32.1
UNITmAmAVVΩVVV
VBE = 0 V; VCE = VCESMmaxVBE = 0 V; VCE = VCESMmaxTj = 125 ˚C
Collector-emitter sustaining voltageIB = 0 A; IC = 100 mA;
L = 25 mH
Emitter-base breakdown voltageIB = 600 mABase-emitter resistanceVEB = 6 V
Collector-emitter saturation voltagesIC = 4 A; IB = 1.0 ABase-emitter saturation voltageIC = 4 A; IB = 1.0 ADC current gainIC = 500 mA; VCE = 5 V
IC = 4 A; VCE = 5 V
Diode forward voltageIF = 4 A
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specifiedSYMBOLts
tfVfrtfr
PARAMETER
Switching times (16 kHz linedeflection circuit)Turn-off storage timeTurn-off fall time
Anti-parallel diode forward recoveryvoltage
Anti-parallel diode forward recoverytime
CONDITIONS
ICsat = 4 A; IB1 = 0.8 A;(IB2 = -2 A)
3.7300
IF = 4 A; dIF/dt = 50 A/µsVF = 5 V
18.5500
4.00--µsnsVns
TYP.
MAX.
UNIT
2 Measured with half sine-wave voltage (curve tracer).
January 19992Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU4507DZ
TRANSISTORICDIODEICsat+ 150 v nominal adjust for ICsattLcIBIB1t20us26ususVCEtIB2IBendLBD.U.T.CfbRbe-VBBFig.1. Switching times waveforms (16 kHz).Fig.4. Switching times test circuit.ICsat90 %IC100hFEVCE = 1VThs = 25 CThs = 85 C10 %tftsIBIB1t10t10.01- IB20.11IC / A10Fig.2. Switching times definitions.Fig.5. High and low DC current gain.IFIF100hFEVCE = 5VBU4507DF/X/ZThs = 25 CThs = 85 C10%tfrVFtime105 VVFtimeVfr10.010.11IC / A10Fig.3. Definition of anti-parallel diode Vfr and tfr.Fig.6. High and low DC current gain.January 19993Rev 1.000
元器件交易网www.cecb2b.com
Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU4507DZ
10Ths = 25 CThs = 85 CBU4507DF/X/Z120 110 100 90 80 70 60 50 40 30 20 10 0 PD%Normalised Power Deratingwith heatsink compound10.1IC/IB = 50.010.1020406011010080Ths / C100120140Fig.7. Typical collector-emitter saturation voltage.Fig.10. Normalised power dissipation.PD% = 100⋅PD/PD 25˚CZth K/WBU4507AZ1.2VBESAT \\ VBU4507DF/X/ZThs = 25 CThs = 85 C101.110.50.20.10.0510.10.9IC = 4 A0.020.80.01PD0tpD = tpTt1.0E+010.70.0011.0E-07T0.60123IB / A41.0E-051.0E-31.0E-01t / sFig.8. Typical base-emitter saturation voltage.Fig.11. Transient thermal impedance.10ts/tf/ usBU4507D ts/tf8ICsat = 4 AThs = 85 CFreq = 16 kHz2000.511.522.5IB / A3Fig.9. Typical collector storage and fall time.IC =4 A; Tj = 85˚C; f = 16kHzJanuary 19994Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU4507DZ
MECHANICAL DATA
Dimensions in mmNet Mass: 2 g10.3max3.23.02.86.415.8 19max.max.3 max.not tinned313.5min.10.4M4.6max2.9 maxRecesses (2x) 2.50.8 max. depthseatingplane15.8max2.5231.0 (2x)2.540.60.52.51.30.90.75.08Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8\".
January 19995Rev 1.000
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Philips SemiconductorsProduct specification
Silicon Diffused Power TransistorBU4507DZ
DEFINITIONS
Data sheet statusObjective specificationProduct specificationLimiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information
Where application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.This data sheet contains final product specifications.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
January 19996Rev 1.000