专利内容由知识产权出版社提供
专利名称：Film forming method, pretreatment device,
and processing system
发明人：Kenji Matsumoto,Hitoshi Itoh,Hidenori
Miyoshi,Shigetoshi Hosaka,Hiroshi Sato,KojiNeishi,Junichi Koike
申请号：US13378535申请日：20100616公开号：US08865590B2公开日：20141021
专利附图：
摘要：A film forming method is disclosed in which a thin film comprising manganese is
formed on an object to be processed which has, on a surface thereof, an insulating layerconstituted of a low-k film and having a recess. The method comprises a hydrophilizationstep in which the surface of the insulating layer is hydrophilized to make the surfacehydrophilic and a thin-film formation step in which a thin film containing manganese isformed on the surface of the hydrophilized insulating layer by performing a film formingprocess using a manganese-containing material gas on the surface of the hydrophilizedinsulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectivelyformed on the surface of the insulating layer constituted of a low-k film, which has a lowdielectric constant.
申请人：Kenji Matsumoto,Hitoshi Itoh,Hidenori Miyoshi,Shigetoshi Hosaka,HiroshiSato,Koji Neishi,Junichi Koike
地址：Nirasaki JP,Nirasaki JP,Nirasaki JP,Nirasaki JP,Nirasaki JP,Sendai JP,Sendai JP
国籍：JP,JP,JP,JP,JP,JP,JP
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
更多信息请下载全文后查看