34003400N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AM 3400 is Pb-free (meets ROHS & Sony 259 specifications). 3400is a Green Product ordering option. AM 3400A is electrically identical. FeaturesVDS (V) = 30VID = 4.8 A RDS(ON) = 28mΩ (Max.)(VGS = 10V, ID=3A )RDS(ON) = 33mΩ (Max.)(VGS = 4.5V, ID=2A )RDS(ON) = 52mΩ (Max.)(VGS = 2.5V, ID=1.5A)TO-236(SOT-23)Top ViewGDSG D S Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolVDSDrain-Source VoltageGate-Source VoltageContinuous Drain TA=25°CACurrent Pulsed Drain Current Power Dissipation ABMaximum30±124.8UnitsVVAVGSIDIDMPDTJ, TSTG301.41-55 to 150W°CTA=25°CTA=70°CJunction and Storage Temperature RangeThermal CharacteristicsParameter
A
Maximum Junction-to-Ambient
AMaximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
t ≤ 10sSteady-StateSteady-State
RθJARθJLTyp658543Max9012560Units°C/W°C/W°C/W
3400Electrical Characteristics (TJ=25°C unless otherwise noted)Symbol
Parameter
ConditionsID=250µA, VGS=0V VDS=24V, VGS=0V VDS=0V, VGS=±12V
Min30
0.1100
Typ
Max
STATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSS
Zero Gate Voltage Drain CurrentGate-Body leakage current
VµAnA
Units
VGS(th) 0.6 1.0 vGate Threshold VoltageVDS=VGS ID=250µAID(ON)30AVGS=4.5V, VDS=5VOn state drain current
VGS=10V, ID=3A
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=2A VGS=2.5V, ID=1.5A
28
mΩ
33 mΩ
52 mΩ
gFS Forward Transconductance10 15 SVDS=5V, ID=4.8AVSD Diode Forward VoltageIS=1A,VGS=0V0.71 1.3 VIS Maximum Body-Diode Continuous Current2.5 ADYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssRg
Reverse Transfer CapacitanceGate resistance
VGS=0V, VDS=0V, f=1MHz
823
VGS=0V, VDS=15V, f=1MHz
99771.29.7
VGS=4.5V, VDS=15V, ID=5.8A
1.63.13.3
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=3Ω
IF=5A, dI/dt=100A/µs
4.826.34.1168.9
5740620123.6121030
pFpFpFΩnCnCnCnsnsnsnsnsnC
SWITCHING PARAMETERSQgTotal Gate ChargeQgsGate Source ChargeQgdtD(on)trtD(off)tftrrQrr
Gate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeIF=5A, dI/dt=100A/µs
2A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
3400TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2510V3V204.5V152.5V)(A DI10VGS=2V50012345VDS (Volts)Fig 1: On-Region Characteristics6050)Ωm40VGS=2.5V( )NO(DS30RVGS=4.5V20VGS=10V1005101520ID (A)Figure 3: On-Resistance vs. Drain Current andGate Voltage7060ID=5A)50Ωm125°C( )N40O(DSR302025°C100246810VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage2016VDS=5V12)(ADI8125°C25°C4000.511.522.53VGS(Volts)Figure 2: Transfer Characteristics1.8ecna1.6tsisVGS=4.5Ve-R1.4VnGS=10VO dez1.2VGS=2.5Vilamro1N0.80255075100125150175Temperature (°C)Figure 4: On-Resistance vs. JunctionTemperature1.0E+011.0E+001.0E-01125°C)1.0E-02(A IS1.0E-0325°C1.0E-041.0E-051.0E-060.00.20.40.60.81.01.2VSD (Volts)Figure 6: Body-Diode Characteristics3400TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS54VGS (Volts)3212000024681012Qg (nC)Figure 7: Gate-Charge Characteristics0051015202530VDS (Volts)Figure 8: Capacitance Characteristics1400VDS=15VID=5ACapacitance (pF)12001000800600400CossCrssCiss 100.0TJ(Max)=150°CTA=25°CPower (W)100µs1ms0.1s1.01s10sDC0.10.11VDS (Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note E)1010010ms40ID (Amps)RDS(ON) 10.0limitedTJ(Max)=150°CTA=25°C30201000.0010.010.11101001000Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA Normalized Transient Thermal ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=90°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse10.1PDTonSingle PulseT0.010.000010.00010.0010.010.11101001000Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance