ISP521-1X, ISP521-2X, ISP521-4XISP521-1, ISP521-2, ISP521-4 HIGH DENSITY MOUNTING PHOTOTRANSISTOROPTICALLY COUPLED ISOLATORSAPPROVALSzUL recognised, File No. E91231Package Code \" EE \"'X' SPECIFICATION APPROVALSzVDE 0884 in 3 available lead form : -- STD- G form- SMD approved to CECC 00802zCertified to EN60950 by :-Nemko - Certificate No. P01102465DESCRIPTIONThe ISP521-1 , ISP521-2 , ISP521-4 series ofoptically coupled isolators consist of infraredlight emitting diodes and NPN silicon phototransistors in space efficient dual in line plasticpackages.FEATURESzOptions :-10mm lead spread - add G after part no.Surface mount - add SM after part no.Tape&reel - add SMT&R after part no.zHigh Current Transfer Ratio ( 50% min)zHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )zHigh BVCEO ( 55Vmin )zAll electrical parameters 100% testedzCustom electrical selections availableAPPLICATIONSzComputer terminalszIndustrial systems controllerszMeasuring instrumentszSignal transmission between systems ofdifferent potentials and impedancesISP521-1XISP521-12.547.06.012Dimensions in mm431.25.084.087.6213°Max0.2.03.00.53.0ISP521-2XISP521-20.52.543.3517.06.087657.622341.210.169.1.03.00.53.00.53.350.26123457.06.06787.6213°Max0.2616151413121110913°MaxISP521-4XISP521-42.54OPTION SMSURFACE MOUNTOPTION G 7.621.220.3219.324.03.00.53.00.53.350.60.110.46 9.86 0.75 1.250.2610.16ISOCOM COMPONENTS LTDUnit 25B, Park View Road West,Park View Industrial Estate, Brenda RoadHartlepool, Cleveland, TS25 1YDTel: (01429) 863609 Fax :(01429) 86358127/11/08DB92252ABSOLUTE MAXIMUM RATINGS(25°C unless otherwise specified)
Storage Temperature-55°C to + 125°COperating Temperature-30°C to + 100°CLead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°CINPUT DIODEForward CurrentReverse VoltagePower DissipationOUTPUT TRANSISTOR
Collector-emitter Voltage BVCEOEmitter-collector Voltage BVECOCollector CurrentPower DissipationPOWER DISSIPATIONTotal Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
50mA5V70mW
55V 6V50mA150mW
200mW
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (VF)Reverse Current (IR)
Output
Collector-emitter Breakdown (BVCEO)55
( Note 2 )
Emitter-collector Breakdown (BVECO)6Collector-emitter Dark Current (ICEO)Current Transfer Ratio (CTR) (Note 2)ISP521-1, ISP521-2, ISP521-4CTR selection availableBL
GBGBCollector-emitter Saturation VoltageVCE (SAT)
-GBInput to Output Isolation Voltage VISO 5300 7500Input-output Isolation Resistance RISO 5x1010Rise Time, trFall Time, tf
Note 1Note 2
435020010030
MINTYPMAXUNITS TEST CONDITION1.0
1.15
1.310
VμAVVnA
IF = 10mAVR = 4VIC = 0.5mAIE = 100μAVCE = 20V5mA IF , 5V VCE1mA IF , 0.4V VCE8mA IF , 2.4mA IC1mA IF , 0.2mA ICSee note 1See note 1
VIO = 500V (note 1)VCE = 2V ,
IC = 2mA, RL = 100Ω
100
Coupled
600600600
%%%%VVVRMSVPKΩμsμs
0.40.4
Measured with input leads shorted together and output leads shorted together.Special Selections are available on request. Please consult the factory.
27/11/08
DB92252
Collector Power Dissipation vs. Ambient TemperatureCollector Current vs. Low200
)Wm( CP 150
noitapissid100
rewop rot50
celloC0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )Forward Current vs. Ambient Temperature60
50
)Am( F40I tnerru30c draw20roF100
-30 0 25 50 75 100 125
Ambient temperature TA ( °C ))Collector-emitter SaturationV(Voltage vs. Ambient Temperature
)AT0.28
S(ECV0.24 eIgatl0.20IF = 5mAC = 1mAov noi0.16taruta0.12s retti0.08me-ro0.04tcello 0
C-30 0 25 50 75 100
Ambient temperature TA ( °C )
27/11/08
Collector-emitter Voltage
25
TA = 25°C)Am2050( C40I tn30er1520ruc rotc1010e5lloC 5 IF = 2mA 0
0 0.2 0.4 0.6 0.8 1.0
Collector-emitter voltage VCE ( V )
Collector Current vs. Collector-emitter Voltage50
50TA = 25°C304020C1530102010 IF = 5mA0
0 2 4 6 8 10Collector-emitter voltage VCE ( V )Current Transfer Ratio vs. Forward Current320
28024020016012080V40TCE = 5VA = 25°C 0
1 2 5 10 20 50
Forward current IF (mA)
DB92252
Collector current I (mA)Current transfer ratio CTR (%)