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专利名称：Zinc oxide piezoelectric crystal film on
sapphire plane
发明人：Jun Koike,Hideharu Ieki申请号：US08/4052申请日：19950322公开号：US05532537A公开日：19960702
摘要：When a zinc oxide piezoelectric crystal film is epitaxially grown on an R-planesapphire substrate by sputtering, a target containing not more than 4.5 percent byweight of Cu with respect to the total content of Zn and Cu is employed so that the zincoxide piezoelectric film contains Cu. Thus, it is possible to obtain a zinc oxide piezoelectriccrystal film having excellent orientation.
申请人：MURATA MANUFACTURING CO., LTD.
代理机构：Ostrolenk, Faber, Gerb & Soffen
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