DF3A6.8FE

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF3A6.8FE

Diodes for Protecting against ESD

• The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced. • The zener voltage corresponds to the E24 Series.

Unit: mm

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit Power dissipation Junction temperature Storage temperature range

P

100 mW

JEITA

―

―

Tj 125 °C JEDEC Tstg

−55~125 °C

TOSHIBA 1-2SA1A Weight: 0.0023 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Zener voltage Dynamic impedance Knee dynamic impedance Reverse current

Terminal capacitance

(between Cathode and Anode)

VZ ZZ ZZK IR CT

IZ = 5 mA IZ = 5 mA IZ = 0.5 mA VR = 5 V VR = 0, f = 1MHz

6.4

6.8

7.2

V

⎯ 10 25 Ω ⎯ ⎯

30 ⎯

⎯ 0.5

Ω µA

― 45 ― pF

Guaranteed Level of ESD Immunity

Test Condition IEC61000-4-2 (Contact discharge)

ESD Immunity Level

± 30 kV

Criterion: No damage to device elements

Marking Equivalent Circuit (top view)

6.8

12006-04-03

DF3A6.8FE

CT - VR100TOTAL CAPACITANCE CT (pF)Ta=25°Cf=1MHz100246REVERSE VOLTAGE VR (V)8 22006-04-03

DF3A6.8FE

32006-04-03