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Gas temperature control for a plasma process

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专利名称:Gas temperature control for a plasma

process

发明人:Maolin Long申请号:US10173671申请日:20020619公开号:US06811651B2公开日:20041102

专利附图:

摘要:A method and system for controlling the temperatures of at least one gas in aplasma processing environment prior to the at least one gas entering a process chamber.This temperature control may vary at different spatial regions of a showerhead assembly

(either an individual gas species or mixed gas species). According to one embodiment, anin-line heat exchanger alters (i.e., increases or decreases) the temperature of passing gasspecies (either high- or low-density) prior to entering a process chamber, temperaturechange of the gases is measured by determining a temperature of the gas both uponentrance into the in-line heat exchanger assembly and upon exit.

申请人:TOKYO ELECTRON LIMITED

代理机构:Oblon, Spivak, McClelland, Maier & Neustadt, P.C.

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